The influence of the charge of dopant atoms on the lattice parameter of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Absolute lattice parameter measurement;Journal of Materials Science: Materials in Electronics;1999
2. Influence of Si and S doping on structural defects in LEC-grown gallium arsenide;Journal of Crystal Growth;1986-12
3. The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques;Journal of Crystal Growth;1980-11
4. Variation of lattice parameters in GaN with stoichiometry and doping;Physical Review B;1979-03-15
5. Solubility and point defect-dopant interactions in GaAs —I;Journal of Physics and Chemistry of Solids;1979-01
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