The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Lattice superdilation phenomena in doped GaAs
2. Precise lattice parameter determination of dislocation-free gallium arsenide—I
3. P.D. Greene, unpublished data.
4. Precision lattice constant determination
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Probing the nature of charge carriers in one-dimensional conjugated polymers: a review of the theoretical models, experimental trends, and thermoelectric applications;Journal of Materials Chemistry C;2023
2. Nonvolatile voltage-tunable ferroelectric-superconducting quantum interference memory devices;Applied Physics Letters;2021-09-13
3. Precise determination of crystal lattice parameters;Physics-Uspekhi;2020-09-01
4. Universal Approach toward Hysteresis-Free Perovskite Solar Cell via Defect Engineering;Journal of the American Chemical Society;2018-01-22
5. X-ray diffraction micro-imaging of strain in laterally overgrown GaAs layers. Part I: analysis of a single GaAs stripe;Applied Physics A;2008-04-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3