Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Cited by
92 articles.
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1. Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics;Journal of Applied Physics;2023-09-06
2. Increased dephasing length in heavily doped GaAs;New Journal of Physics;2021-08-01
3. III Arsenide;Single Crystals of Electronic Materials;2019
4. Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2016
5. Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09