Effect of Heat Treatment on Photoluminescence of Te Doped GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1657885
Reference11 articles.
1. Effect of Heat Treatment on Photoluminescence of Zn‐Doped GaAs
2. Effect of Heat Treatment on Photoluminescence of Zn‐Doped GaAs
3. Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide
4. Radiative recombination from GaAs directly excited by electron beams
5. Changes in Electron Concentration of Donor‐Doped GaAs Crystals Caused by Annealing
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1. Electron Scattering by Native Defects in Uniformly and Modulation Doped Semiconductor Structures;MRS Proceedings;1989
2. The annealing mechanism of selenium implanted into GaAs;Journal of Physics D: Applied Physics;1986-11-14
3. Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE;Electronics Letters;1986
4. Characteristics of tin and cadmium doping in liquid‐phase epitaxial grown InGaAsP;Journal of Applied Physics;1985-01-15
5. The effect of electron irradiation on the low‐temperature emission spectra from Ge‐doped Ga0.60Al0.40As grown by liquid phase epitaxy;Applied Physics Letters;1981-06
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