Cyclotron resonance at Na+ doped Si-SiO2 interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Cyclotron resonance of electrons in surface space-charge layers on silicon
2. Cyclotron resonance of electron inversion layers in Si (001) metal-oxide-semiconductor field-effect transistors (MOSFET's)
3. Effective mass and collision time of (100) Si surface electrons
4. Variation of the Shubnikov-de Haas amplitudes with ionic scattering in silicon inversion layers
5. Temperature dependence of scattering in the inversion layer
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Charge density and orientation dependence of the effectiveness mass in electron inversion layers on the principal surfaces of Si;Solid State Communications;1983-09
2. Electronic properties of two-dimensional systems;Reviews of Modern Physics;1982-04-01
3. A spectroscopic study of Na+ -bound electrons at Si-SiO2 interfaces;Surface Science;1982-01
4. Magnetoconductivity and cyclotron resonance studies on Na+-contaminated Si-SiO2-interfaces;Application of High Magnetic Fields in Semiconductor Physics
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