Cyclotron resonance of electron inversion layers in Si (001) metal-oxide-semiconductor field-effect transistors (MOSFET's)-Reference-Cited by-同舟云学术

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Cyclotron resonance of electron inversion layers in Si (001) metal-oxide-semiconductor field-effect transistors (MOSFET's)

Published:1980-07-15 Issue:2 Volume:22 Page:945-958
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wagner R. J.,Kennedy T. A.,McCombe B. D.,Tsui D. C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.945/fulltext

Reference45 articles.

1. Cyclotron Resonance of Electrons in an Inversion Layer on Si

2. Far-Infrared Cyclotron Resonance in the Inversion Layer of Silicon

3. High-frequency magnetoconductivity in space charge layers on semiconductors

4. Cyclotron Resonance of Localized Electrons on a Si Surface

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