A spectroscopic study of Na+ -bound electrons at Si-SiO2 interfaces-Reference-Cited by-同舟云学术

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A spectroscopic study of Na+ -bound electrons at Si-SiO2 interfaces

Published:1982-01 Issue:1-3 Volume:113 Page:144-147
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Chang H.R.,Koch F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference8 articles.

1. Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers

2. Proc. 13th Intern. Conf. on the Physics of Semiconductors;Hartstein,1976

3. Proc. 14th Intern. Conf. on the Physics of Semiconductors;Hartstein,1979

4. Impurity bands in inversion layers

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Density of states in a two-dimensional electron gas: Impurity bands and band tails;Physical Review B;1988-03-15

2. Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension;The Physics of Submicron Semiconductor Devices;1988

3. The dynamics of electron scattering at Na+-contaminated SiSiO2 interfaces;Surface Science;1986-04

4. Localization and screening anomalies in two-dimensional systems;Physical Review B;1986-02-15

5. Conductivity, plasmon, and cyclotron-resonance anomalies in Si(100) metal-oxide-semiconductor systems;Physical Review B;1985-09-15

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