Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.34.1435/fulltext
Reference7 articles.
1. Variable-range hopping in a silicon inversion layer
2. Mott-Anderson Localization in the Two-Dimensional Band Tail of Si Inversion Layers
3. Transport Properties of Electrons in Inverted Silicon Surfaces
4. Two-Dimensional Impurity States in an n-Type Inversion Layer of Silicon
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