The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact

Author:

Nabiev Asaf,Chucheva Galina,Goldman Evgeny,Naryshkina Valentina

Publisher

SPIE

Reference20 articles.

1. [MOS (Metal Oxide Semiconductor) Physics and Technology];Nicollian,1982

2. Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers

3. [Electronic properties of two-dimensional systems];Ando,1985

4. A new approach to the creation of nanoelectronic systems using a dimensionally-quantized potential relief of charges built into insulating layers on a semiconductor surface

5. Organization of nanoscale and a dimensionally quantized of semiconductor structures by generating of adjacent to the semiconductor layer insulator’s regular distribution of localized charge forming at the surface of the semiconductor special potential relief;Goldman;Microelectronics,2001

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