Variation of the Shubnikov-de Haas amplitudes with ionic scattering in silicon inversion layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.18.5502/fulltext
Reference18 articles.
1. Magneto-Oscillatory Conductance in Silicon Surfaces
2. Electron-Electron Interactions Continuously Variable in the Range2.1>rs>0.9
3. Frequency-Dependent Cyclotron Effective Masses in Si Inversion Layers
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1. Single-particle relaxation time of the two-dimensional electron gas in Si/SiGe: Many-body effects;JETP Letters;2011-06
2. Electron effective mass in ultrathin oxide silicon MOSFET inversion layers;Semiconductor Science and Technology;2005-05-16
3. Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two‐dimensional hole gas;Applied Physics Letters;1994-01-17
4. Tunneling in Silicon Inversion Layers in High Magnetic Fields;Springer Series in Solid-State Sciences;1987
5. Localization and quantization in silicon inversion Iayers;Contemporary Physics;1985-05
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