Transport properties of praseodymium doped p-type In0.53Ga0.47As layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy
2. Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare-earth oxides
3. Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSb
4. Electron Transport in Compound Semiconductors;Nag,1980
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. On the calculation of electron mobility in In0.53Ga0.47As;Solid-State Electronics;1992-09
2. Carrier concentration and compensation ratio dependence of electron drift mobility in InAs1−xSbx;Journal of Applied Physics;1992-08-15
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