Carrier concentration and compensation ratio dependence of electron drift mobility in InAs1−xSbx
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351700
Reference41 articles.
1. High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector
2. Optical characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by molecular‐beam epitaxy
3. Liquid‐phase‐epitaxial InAsySb1−yon GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid‐IR photodiodes
4. InAsSb strained-layer superlattices for long wavelength detector applications
5. Growth and properties of InAsxSb1−x, AlyGa1−ySb, and InAsxSb1−x/AlyGa1−ySb heterostructures
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2. Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency;Journal of Crystal Growth;2020-04
3. MICROMAGNETISM INDUCED BY THE UNPAIRED ELECTRONS IN InSb SINGLE CRYSTAL;Modern Physics Letters B;2013-10-15
4. Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy;Reviews of Modern Physics;2011-06-03
5. Structural, electrical, and optical properties of InAs[sub x]Sb[sub 1−x] epitaxial films grown by liquid-phase epitaxy;Journal of Applied Physics;2008
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