Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSb
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference23 articles.
1. Variation of Electrical Properties with Zn Concentration in GaP
2. Ion-pairing between lithium and the residual acceptors in GaSb
3. Temperature dependence of the hole mobility in doped p-GaP
4. Scattering mechanisms in p-type GaSb in the temperature range 30–300°K
5. Temperature and pressure dependence of the Γ1celectron mobility in GaSb
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1. The influence of temperature gradient and lowering speed on the melt–solid interface shape of GaxIn1−xSb alloy crystals grown by vertical Bridgman technique;Journal of Crystal Growth;1999-06
2. Hole Transport in the InSbInAs material system;Solid State Communications;1995-02
3. On the calculation of electron mobility in In0.53Ga0.47As;Solid-State Electronics;1992-09
4. Electrical characterization of semiconducting polycrystalline GaxIn(1?x)Sb alloys;Journal of Materials Science;1992
5. Transport properties of praseodymium doped p-type In0.53Ga0.47As layers;Solid State Communications;1991-05
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