The influence of temperature gradient and lowering speed on the melt–solid interface shape of GaxIn1−xSb alloy crystals grown by vertical Bridgman technique-Reference-Cited by-同舟云学术

The influence of temperature gradient and lowering speed on the melt–solid interface shape of GaxIn1−xSb alloy crystals grown by vertical Bridgman technique

Published:1999-06 Issue:3 Volume:203 Page:333-339
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Udayashankar N.K.,Gopalakrishna Naik K.,Bhat H.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Growth of gallium antimonide by vertical Bridgman technique with planar crystal-melt interface

2. On the thermodynamic properties of the III–V compounds InSb, GaSb, and InAs

3. Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSb

4. Thermodynamic Analysis of the III–V Alloy Semiconductor Phase Diagrams

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