Author:
Wang Ruqing,Wang Jinwei,He Guofang,Yang Donghai,Zhang Weicai,Liu Juncheng
Funder
National Natural Science Foundation of China
Key Technology Research and Development Program of Shandong
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. B. Krishan, P.B. Barman, G.S. Mudahar, N.P. Singh, Growth of GaxIn1−xSb bulk crystals for infrared device applications by vertical Bridgman technique. Mater. Lett. 58, 1441–1445 (2004)
2. D.B. Gadkari, P. Shashidharan, K.B. Lal, N.A. Gokhale, A.P. Shah, B.M. Arora, Growth morphology and compositional analysis of InxGa1−xSb crystals-grown by vertical directional solidification technique. Indian J. Pure Appl. Phys. 37, 652–656 (1999)
3. V.V. Brazhkin, A.G. Lyapin, S.V. Popova, N.V. Kalyaeva, Preparation of a new class of semiconductors: bulk amorphous tetrahedral solid solutions Ge1−x(GaSb)x. J. Mater. Sci. 30, 443–446 (1995)
4. I. Vurgaftman, G. Belenky, Y. Lin, D. Donetsky, L. Shterengas, G. Kipshidze, W.L. Sarney, S.P. Svensson, Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials. Appl. Phys. Lett. 108, 187–190 (2016)
5. D.Z. Ting, S.D. Gunapala, A. Soibel, J. Nguyen, A. Khoshakhlagh, Single-band and dual-band infrared detectors. U.S. Patent No. 8,928,029. 6 Jan 2015
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献