Growth of GaxIn1−xSb bulk crystals for infrared device applications by vertical Bridgman technique-Reference-Cited by-同舟云学术

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Growth of GaxIn1−xSb bulk crystals for infrared device applications by vertical Bridgman technique

Published:2004-03 Issue:9 Volume:58 Page:1441-1445
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Krishan Bal,Barman P.B.,Mudahar Gurmel S.,Singh N.P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Physics of Semiconductor Devices,1993

2. Physics of Semiconductor Devices,1998

3. The effect of temperature gradient and ampoule velocity on the composition and other properties of Bridgman-grown indium antimonide

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1. Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method;Semiconductor Science and Technology;2023-02-07

2. High-pressure dependence of acoustic velocities, phonon frequencies and mechanical properties of Al1−xInxN ternary alloys;Physica Scripta;2021-06-24

3. Energy band structure, acoustic velocities, optical phonon frequencies and mechanical properties of InP1-xSbx alloys under temperature and pressure;Infrared Physics & Technology;2021-06

4. Acoustic velocity and phonon frequencies of GaxIn1−xSb alloys under pressure, temperature, and compositions;Physica Scripta;2021-05-28

5. Effects of rotating magnetic field on the microstructure and properties of a GaInSb crystal;Vacuum;2020-04

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