Improving the quality and properties of GaInSb crystal with Al doping

Abstract

Abstract GaInSb crystal is a promising substrate material that can be used to prepare various high-performance devices. Ga0.86In0.14Sb and Al-doped Ga0.86In0.14Sb (Ga0.86In0.14Sb:Al) crystals were grown with the vertical Bridgman method (VB). The doping concentration of aluminum (Al) is 0.005–0.015 molar ratio. The effect of Al doping on the structure and properties of Ga0.86In0.14Sb crystal was studied. The results indicated that Al doping significantly reduced the segregation of indium (In) component in the crystal, with the radial segregation reaching a minimum of 0.051 mol% mm−1 and the axial segregation reaching a minimum of 0.067 mol% mm−1. The doping of Al also improved the crystal quality (lattice structure integrity) of Ga0.86In0.14Sb. The passivation and compensation of Al on the intrinsic defects of Ga0.86In0.14Sb crystal significantly inhibited the generation of dislocation, of which density decreased to 2.461 × 103 cm−2. The doping of Al as the equivalent electron element of gallium (Ga) and In not only made the carrier concentration increase to 1.848 × 1018 cm−3 but also made the carrier mobility increase to 1.982 × 103 cm2/(V·s), resulting in the resistivity decreasing to 1.261 × 10−3 Ω·cm.