Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed-Reference-Cited by-同舟云学术

Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

Published:2008-04 Issue:7-9 Volume:310 Page:1433-1437
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Murakami Noriaki,Hikida Takuya,Konno Akiko,Arafune Kouji,Koyama Tadanobu,Momose Yoshimi,Ozawa Tetsuo,Miyazawa Masafumi,Kumagawa Masashi,Hayakawa Yasuhiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Calculation of ternary phase diagrams of III–V systems

2. Morphological instability under constitutional supercooling during the crystal growth of InSb from the melt under stabilizing thermal gradient

3. Crystal Growth and Segregation under Zero Gravity: Ge

4. Pb1 − xSnxTe crystal growth in space

5. Floating-zone growth of surface-coated silicon under microgravity

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