Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare-earth oxides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Schottky-barriers on p-type GaInAs
2. Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate
3. The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy
4. Mn as a p-type dopant in In0.53Ga0.47As on InP substrates
5. Growth and doping of InGaAsP/InP by liquid-phase epitaxy
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