Picosecond time-resolved luminescence of hydrogenated amorphous silicon-carbon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference6 articles.
1. White photoluminescence of amorphous silicon‐carbon alloy prepared by glow‐discharge decomposition of tetramethylsilane
2. Radiative and non-radiative tunnelling in glow-discharge and sputtered amorphous silicon
3. Time resolved photoluminescence near the “band gap” in amorphous silicon
4. Optically detected electron spin resonance in amorphous silicon
5. Luminescence and recombination in hydrogenated amorphous silicon
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1. Room-temperature deposition of a-SiC:H thin films by ion-assisted plasma-enhanced CVD;Thin Solid Films;1996-09
2. Photoluminescence of tetrahedrally coordinateda-Si1−xCx:H;Physical Review B;1995-10-15
3. Growth Mechanism of Room‐Temperature Deposited a ‐ SiC : H Films by Ion‐Assisted RF Glow Discharge;Journal of The Electrochemical Society;1995-10-01
4. Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperature;Thin Solid Films;1995-06
5. Photoluminescence characterization ofa-Si1−xCx:H alloys prepared by cosputtering;Physical Review B;1993-10-15
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