Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference56 articles.
1. Graded-gap a-SiC:H p-i-n thin-film light-emitting diodes
2. Hydrogenated amorphous Si/SiC superlattice phototransistors
3. Characteristics of a single a-SiC : H/a-Si : H heterostructure as a high-gain photodetector
4. An amorphous SiC/Si heterojunction p-i-n diode for low-noise and high-sensitivity UV detector
5. Properties and structure ofa‐SiC:H for high‐efficiencya‐Si solar cell
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