Luminescence and recombination in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

Luminescence and recombination in hydrogenated amorphous silicon

Published:1981-10 Issue:5 Volume:30 Page:593-676
ISSN:0001-8732
Container-title:Advances in Physics
language:en
Short-container-title:Advances in Physics

Author:

Street R.A.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/00018738100101417

Reference125 articles.

1. Allen, D., LeComber, P.G. and Spear, W.E.Proceedings of the Seventh International Conference on Amorphous and Liquid Semiconductors. Edited by: Spear, W.E. pp.323–323. University of Edinburgh: CICL.

2. The effect of gap state density on the photoconductivity and photoluminescence of a-Si:H

3. Importance of argon pressure in the preparation of rf‐sputtered amorphous silicon–hydrogen alloys

4. Photoconductivity and recombination in doped amorphous silicon

5. Photoluminescence and lifetime studies on plasma discharge a-Si

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