Thickness and doping dependence of the optical gap in amorphous hydrogenated silicon films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Effects of annealing on plasma-depositeda-Si:H films grown under optimal conditions
2. Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated silicon
3. Thickness dependence of electrical and optical properties and E.S.R. in undoped a-Si: H
4. Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon
5. Optical properties of a-Si:H and a-SixC1−x:H films prepared by glow-discharge deposition
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1. Metastability of a-SiOx:H thin films for c-Si surface passivation;Applied Surface Science;2017-01
2. Doped SiO x emitter layer in amorphous/crystalline silicon heterojunction solar cell;Applied Physics A;2013-08-31
3. Calculation of the optical constants of amorphous [(As2S3):(As2Se3)]1-x: Snx thin films;SPIE Proceedings;2012-11-01
4. Electronic Properties of Ultrathin a-Si:H Layers and the a-Si:H/c-Si Interface;Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells;2012
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