Thickness dependences of properties of P- and B-doped hydrogenated amorphous silicon
Author:
Affiliation:
1. a Department of Electronics, Faculty of Technology , Kanazawa University , Kanazawa , 920 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818408227660
Reference18 articles.
1. Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon
2. Thickness dependent conductivity of n-type hydrogenated amorphous silicon
3. The role of hydrogen in heavily doped amorphous silicon
4. Davis , E. A. 1973. Amorphous Semiconductors, Edited by: Le Comber , P. G. and Mort , J. 450New York: Academic Press.
5. Electron Spin Resonance of Doped Glow-Discharge Amorphous Silicon
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