High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Quantum‐well infrared photodetectors
2. 640×486 long-wavelength two-color GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera
3. A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector
4. Self-assembled InAs-GaAs quantum-dot intersubband detectors
5. Characteristics of InGaAs quantum dot infrared photodetectors
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1. High-speed InAs quantum dot photodetectors for data/telecom;Photodetectors;2023
2. Infrared photodetector sensitized by InAs quantum dots embedded near an Al0.3Ga0.7As/GaAs heterointerface;Scientific Reports;2020-07-15
3. Recent Progress on Extended Wavelength and Split-Off Band Heterostructure Infrared Detectors;Micromachines;2020-05-28
4. Incorporation of quaternary (In0.22Al0.22Ga0.56As) capping in p-i-p QDIPs for efficient minimization of hole-assisted dark current;Infrared Physics & Technology;2019-12
5. Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In0.15Ga0.85As/GaAs capping;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI;2019-03-04
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