Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In0.15Ga0.85As/GaAs capping-Reference-Cited by-同舟云学术

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Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In0.15Ga0.85As/GaAs capping

Published:2019-03-04 Issue: Volume: Page:
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Container-title:Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI
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Author:

Kumar Ravinder,Panda Debiprasad,Das Debabrata,Chavan Vinayak,Kumar Raman,Chakrabarti Subhananda,Sheshadri Sreedhara

Publisher

SPIE

Reference24 articles.

1. Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

2. Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

3. Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

4. Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection

5. Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs

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