Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
2. Linear increase of the modal gain in 1.3 µm InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers
3. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
4. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
5. Control of subband energy levels of quantum dots using InGaAs gradient composition strain-reducing layer
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3. Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without Migration Enhanced Epitaxy layer;Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII;2020-03-02
4. Enhancing the performance of heterogeneously coupled InAs Stranski-Krastanov on submonolayer quantum dot heterostructures;Superlattices and Microstructures;2019-11
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