Control of subband energy levels of quantum dots using InGaAs gradient composition strain-reducing layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2218825
Reference14 articles.
1. Superlattice and Negative Differential Conductivity in Semiconductors
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3. Semiconductor Quantum Dots
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1. Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors;Applied Physics A;2014-12-11
2. Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBE;Journal of Nanoscience and Nanotechnology;2010-08-01
3. Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs;Superlattices and Microstructures;2009-12
4. Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots;Chinese Physics Letters;2008-07
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