A Novel RF SOI LDMOS with a Raised Drift Region
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics
Reference10 articles.
1. Study on power characteristics of deep sub-micron SOI RF LDMOS;Jingshun Hai;Acta. Physica Sinica,2011
2. Design for Reliability: The RF Power LDMOSFET;De;IEEE Transactions on Device and Material. Reliability;,2007
3. Radhakrishnan Sithanandam, M. Jagadesh Kumar., A new Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power. Amplifier Applications. In 23rd International Conference on VLSI Design, Bangalore; 2010, 230-234.
4. S. G. Xu, H.P. Zhang, D.J. Wang, et al. Forward Block characteristic of a novel RF SOI LDMOS with a Buried P-type layer.IEEE International SOI Conference, San Diego, USA. 2010.
5. T. Khan, V. Khemka, R. Zhu. Incremental FRESURF LDMOSFET structure for enhanced voltage blocking capability on.0.13um, SOI based technology. In 20th International Symposium on Power Semiconductor Devices and IC's, Oralando; 2008, 279-182.
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of novel silicon based lateral power devices with floating substrate on insulator;Acta Physica Sinica;2021
2. A novel high performance LDMOS transistor with high channel density;Journal of Computational Electronics;2017-09-15
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