A New Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applications-Reference-Cited by-同舟云学术

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A New Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applications

Published:2010-01 Issue: Volume: Page:
ISSN:
Container-title:2010 23rd International Conference on VLSI Design
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Author:

Sithanandam Radhakrishnan,Kumar Mamidala Jagadesh

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5400049/5401179/05401324.pdf?arnumber=5401324

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In _0.53 Ga _0.47 As/In _0.52 Al _0.48 As Quantum Well Step Gate LDMOS to Improve the Device Performance;IETE Journal of Research;2023-12-19

2. Assessing the impact of step gate oxide and gate electrode engineering on performance of β-Ga2O3 MOSFET for high frequency applications;Micro and Nanostructures;2023-08

3. TCAD Investigation of Step-Oxide and Asymmetric Doping Design with Electrode Engineering on Lateral β-Ga₂O₃ MOSFET for Terahertz Applications;2023 IEEE Latin American Electron Devices Conference (LAEDC);2023-07-03

4. Implementation of Step-Hetero-Oxide & Dual Material Gate Designs on Lateral β-Ga₂O₃ MOSFET for Terahertz Applications;2023 IEEE Latin American Electron Devices Conference (LAEDC);2023-07-03

5. BCD Process Technologies;Springer Handbook of Semiconductor Devices;2022-11-11

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