In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As Quantum Well Step Gate LDMOS to Improve the Device Performance-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

In _0.53 Ga _0.47 As/In _0.52 Al _0.48 As Quantum Well Step Gate LDMOS to Improve the Device Performance

Published:2023-12-19 Issue: Volume: Page:1-9
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE Journal of Research

Author:

Mohanty S. S.¹,Mishra S.¹²,Mishra G. P.²^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, S‘O’A (Deemed to be) University, Khandagiri, Bhubaneswar 751030, India

2. Department of Electronics and Communication Engineering, National Institute of Technology Raipur, G.E. Road, Raipur, Chhattisgarh 492010, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/03772063.2023.2290091

Reference28 articles.

1. High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications

2. RF transistors: Recent developments and roadmap toward terahertz applications

3. Linearity and speed optimization in SOI LDMOS using gate engineering

4. A new SiGe stepped gate (SSG) thin film SOI LDMOS for enhanced breakdown voltage and reduced delay;Sithanandam R.;Proc. ISDRS.,2009

5. R. Sithanandam and M. J. Kumar. “A new hetero-material stepped gate (HSG) SOI LDMOS for RF power amplifier applications ” In Proc. 23rdInt. Conf. VLSI Des. pp. 230–34; 2010.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP