Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone

Author:

Lee Young-Soo,Choi Dong-won,Shong Bonggeun,Oh Saeroonter,Park Jin-Seong

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference24 articles.

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2. B. Yu, H. Wang, C. Riccobene, Q. Xiang, M.R. Lin, Limits of Gate-Oxide Scaling in Nano-Transistors, Symp. VLSI Technol., Digest of Tech. Paper, 2000, 90.

3. Atomic layer deposition, characterization, and dielectric properties of HfO2/SiO2 nanolaminates and comparisons with their homogeneous Mixtures;Zhong;Chem. Vap. Dep.,2006

4. High-quality low-temperature silicon oxide by plasma-enhanced atomic layer deposition using a metal–organic silicon precursor and oxygen radical;Won;IEEE Electron Dev. Lett.,2010

5. Gas diffusion barriers on polymers using multilayers fabricated by Al2O3 and rapid SiO2 atomic layer deposition;Dameron;J. Phys. Chem. C.,2008

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