Growth Techniques and Procedures-Reference-Cited by-同舟云学术

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Growth Techniques and Procedures

Published:1998 Issue: Volume: Page:1-48
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
Short-container-title:

Author:

Bean John C.

Publisher

Elsevier

Reference119 articles.

1. Selective growth of silicon‐germanium alloys by atmospheric‐pressure chemical vapor deposition at low temperatures

2. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth

3. Characterization of Different Length Scales and Periodicities inGe/Si Microstructures by Raman Spectroscopy: Theory and Experiment

4. Linear-chain-model interpretation of resonant Raman scattering inGenSimmicrostructures

5. National Research Council of Canada (private communication);Baribeau,1997

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium: Organometallic Chemistry;Encyclopedia of Inorganic and Bioinorganic Chemistry;2015-09-14

2. Atomistic examinations of the solid-phase epitaxial growth of silicon;Journal of Crystal Growth;2009-05

3. Si-SiGe(C) Epitaxy by RTCVD;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13

4. Si–SiGe(C) Epitaxy by RTCVD;Silicon Heterostructure Handbook;2005-11

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