Chapter 11 Oxygen Effect on Mechanical Properties
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Elsevier
Reference58 articles.
1. Amorphization and Conductivity of Silicon and Germanium Induced by Indentation
2. Differences in plastic deformation behaviour of CZ- and FZ-grown silicon crystals
3. Electron microscope investigation of the microplastic deformation mechanisms of silicon by indentation
4. Effect of Impurities on the Individual Dislocation Mobility in Silicon
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