Data-assisted physical modeling of oxygen precipitation in silicon wafers
Author:
Affiliation:
1. Department of Chemical and Biomolecular Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
2. Siltronic AG, Hanns-Seidel-Platz 4, 81737 München, Germany
Funder
Siltronic AG
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5090121
Reference72 articles.
1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
2. R. J. Falster and V. V. Voronkov, Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers (Trans Tech Publications, 2008), p. 45.
3. Chapter 11 Oxygen Effect on Mechanical Properties
4. Oxygen precipitation in silicon
5. Oxide Micro‐Precipitates in As‐Grown CZ Silicon
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