Influence of interface states on field effect and capacitance-voltage characteristics of metal/oxide/a-Si:H structures
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference14 articles.
1. Investigation of the localised state distribution in amorphous Si films
2. Investigation of the density of localized states in a-Si using the field effect technique
3. Proc. 7th Intern. Conf. on Amorphous and Liquid Semiconductors;Madan,1977
4. Effect of annealing and light exposure on the field-effect density of states in glow-discharge a-Si: H
5. Proc. 7th Intern. Conf. on Amorphous and Liquid Semiconductors;Döhler,1977
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