Quantitative in-situ Kelvin probe study of boron doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide
Author:
Affiliation:
1. a Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS) Ecole Polytechnique , 91128 , Palaiseau , Cedex , France
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639708243140
Reference24 articles.
1. Chapter 8 Doping Effects in a-Si: H
2. Local structure of dopants in compensated and singly-doped amorphous silicon
3. Determination of the boron concentration in a-Si:H films by nuclear reaction method
4. Analytical compensation of stray capacitance effect in Kelvin probe measurements
5. Dependence of Open Circuit Voltage of Amorphous Silicon Solar Cells on Thickness and Doping Level of the p-Layer
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