Local structure of dopants in compensated and singly-doped amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference7 articles.
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1. Increasing the doping efficiency by post-deposition annealing in a-SiGe: H films synthesized by PECVD;2023 IEEE Latin American Electron Devices Conference (LAEDC);2023-07-03
2. Amorphous Materials, Structure Of;digital Encyclopedia of Applied Physics;2003-04-15
3. Amorphous Semiconductors: Doping;Encyclopedia of Materials: Science and Technology;2001
4. Mobility-edge shift during diborane doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide;Philosophical Magazine B;2000-07
5. Boron-induced electronic states in hydrogenated amorphous silicon;Thin Solid Films;1999-04
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