The characterization of misfit dislocations at {100} heterojunctions in III–V compound semiconductors-Reference-Cited by-同舟云学术

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The characterization of misfit dislocations at {100} heterojunctions in III–V compound semiconductors

Published:1989-10 Issue:10 Volume:37 Page:2779-2793
ISSN:0001-6160
Container-title:Acta Metallurgica
language:en
Short-container-title:Acta Metallurgica

Author:

De Cooman B.C.,Carter C.B.,Kam Toi Chan,Shealy J.R.

Publisher

Elsevier BV

Subject

General Engineering

Reference38 articles.

1. High-stress deformation of GaAs

2. Proc. 13th Int. Conf. on Defects in Semiconductors;Kuesters,1985

3. Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics

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1. Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates;Applied Surface Science;2014-07

2. Tilt generation in step-graded InxGa1−xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer;Journal of Applied Physics;2008-05-15

3. Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces;Journal of Applied Physics;2007-04

4. TEM studies of stress relaxation in GaAsN and GaP thin films;Philosophical Magazine;2005-09-11

5. Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures;Journal of Materials Research;2005-02

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