TEM studies of stress relaxation in GaAsN and GaP thin films
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786430500154612
Reference41 articles.
1. Defects in epitaxial multilayers
2. Use of misfit strain to remove dislocations from epitaxial thin films
3. The accommodation of misfit at {100} heterojunctions in III–V compound semiconductors by gliding dissociated dislocations
4. The characterization of misfit dislocations at {100} heterojunctions in III–V compound semiconductors
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