On the mechanism of hydrogen sensing with SiO2 modificated high temperature Ga2O3 sensors

Author:

Weh T,Frank J,Fleischer M,Meixner H

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. M. Fleischer, M. Seth, C.-D. Kohl, H. Meixner, Selective H2 sensor implemented using Ga2O3 thin films which are covered with a gas filtering SiO2 layer, in: Proceedings of the 6th International Meeting on Chemical Sensors, Gaithersburg, USA, 22–25 July, Sens. Actuators B 35/36 (1996) 1–6.

2. Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin films;Fleischer;Sens. Actuators B,1998

3. M. Fleischer, Herstellung und Charakterisierung von Ga2O3-Dünnschichten, Untersuchung der gassensitiven elektrischen Leitfähigkeits-eigenschaften, M.Sc. Thesis, University of Munich, Germany, 1991.

4. T. Weh, M. Fleischer, H. Meixner, Optimization of physical gas filters for selective high temperature gas sensors, in: Proceedings of the 13th European Conference on Solid State Transducers, The Hague, The Netherlands, 12–15 September 1999, pp. 361–362.

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