Abstract
Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in the field of Ga2O3-based gas sensors. We begin with a brief introduction of the polymorphs and basic electric properties of Ga2O3. Next, we provide an overview of the typical preparation methods for the fabrication of Ga2O3-sensing material developed so far. Then, we will concentrate our discussion on the state-of-the-art Ga2O3-based gas sensor devices and put an emphasis on seven sophisticated strategies to improve their gas-sensing performance in terms of material engineering and device optimization. Finally, we give some concluding remarks and put forward some suggestions, including (i) construction of hybrid structures with two-dimensional materials and organic polymers, (ii) combination with density functional theoretical calculations and machine learning, and (iii) development of optical sensors using the characteristic optical spectra for the future development of novel Ga2O3-based gas sensors.
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Natural Science Foundation of Inner Mongolia Autonomous Region of china
Fundamental Research Funds for the Central Universities
Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
Subject
General Materials Science
Cited by
26 articles.
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