Equilibrium concentration of vacancies under the anisotropic stress field around and impurity
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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3. Effect of the boron doping concentration and Fermi level on the generation of crystal originated particles inp‐type Czochralski silicon wafers
4. Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals
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