Effect of the boron doping concentration and Fermi level on the generation of crystal originated particles inp‐type Czochralski silicon wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112795
Reference7 articles.
1. Numerical Modeling of the Point Defect Aggregation during the Czochralski Silicon Crystal Growth
2. Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity
3. Effect of Crystal Pulling Rate on Formation of Crystal-Originated “Particles” on Si Wafers
4. Solubility of Flaws in Heavily-Doped Semiconductors
5. The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP
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1. Grown-in Defects in Heavily Boron-Doped Czochralski Silicon;Japanese Journal of Applied Physics;2004-07-07
2. Equilibrium concentration of vacancies under the anisotropic stress field around and impurity;Physica B: Condensed Matter;2001-12
3. Surface Imperfection Behavior during the SiH[sub 4] Epitaxial Growth Process;Journal of The Electrochemical Society;2000
4. Void-like defects in annealed Czochralski silicon;Applied Physics Letters;1998-10-19
5. Characterization of Crystal Quality by Crystal Originated Particle Delineation and the Impact on the Silicon Wafer Surface;Journal of The Electrochemical Society;1998-01-01
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