Deep state defects in strained and relaxed epitaxial Si1−xGex on Si introduced by 3d transition metal and 5d noble metal impurities-Reference-Cited by-同舟云学术

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Deep state defects in strained and relaxed epitaxial Si1−xGex on Si introduced by 3d transition metal and 5d noble metal impurities

Published:1999-12 Issue: Volume:273-274 Page:603-607
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Nauka K,Kamins T.I

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Transition metals in silicon

2. The Proceedings of the 22nd International Conference on the Physics of Semicond. (ICPS-22);Nauka,1995

3. Valence band engineering in strained-layer structures

4. Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principle calculation of the pressure-induced variation in the formation energy of iron defect in Si1−xGex alloy;Applied Physics A;2019-10-29

2. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

3. Electrical Activity of Iron and Copper in Si, SiGe and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

4. Carbon‐hydrogen related defects in SiGe observed after dc H plasma treatment;physica status solidi (a);2017-06-16

5. First principle calculations of iron and iron-boron transition levels in Si1−x Ge x alloy;The European Physical Journal B;2017-06

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