First-principle calculation of the pressure-induced variation in the formation energy of iron defect in Si1−xGex alloy
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s00339-019-3027-5.pdf
Reference22 articles.
1. I. Yonenaga, in Reference Module in Materials Science and Materials Engineering. Six Ge1−x Bulk Crystals (Elsevier, Amsterdam, 2016). https://doi.org/10.1016/B978-0-12-803581-8.03687-0
2. Y. Shiraki, N. Usami, Silicon-Germanium (SiGe) Nanostructures: Production, Properties and Applications in Electronics (Elsevier, Amsterdam, 2011)
3. A. Mesli et al., Iron in relaxed Si1 − x Gex alloy: band gap related levels, diffusion, and alloying effects. Phys. Rev. B 66(4), 045206 (2002)
4. M.A.H. Khalafalla, A. Mesli, First principle calculations of iron and iron–boron transition levels in Si1−xGex alloy. Eur. Phys. J. B 90(6), 103 (2017)
5. K. Nauka, T.I. Kamins, Deep state defects in strained and relaxed epitaxial Si1−xGex on Si introduced by 3d transition metal and 5d noble metal impurities. Phys. B Condens. Matter 273–274, 603–607 (1999)
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