Characterization of GaN films grown on silicon (111) substrates-Reference-Cited by-同舟云学术

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Characterization of GaN films grown on silicon (111) substrates

Published:2003-01 Issue: Volume:325 Page:230-234
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Yang Ying-Ge,Ma Hong-Lei,Xue Cheng-Shan,Hao Xiao-Tao,Zhuang Hui-Zhao,Ma Jin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. The doping of GaN with Mg diffusion

2. High pressure fabrication and processing of GaN:Mg

3. Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6HSiC(0001) substrates

4. Seeded growth of GaN at high N2 pressure on (0001) polar surfaces of GaN single crystalline substrates

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical States of Active and Inactive Dopant Sites in Si-doped GaN(0001);Vacuum and Surface Science;2022-07-10

2. Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN;ACS Applied Electronic Materials;2021-10-08

3. Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE;AIP Conference Proceedings;2016

4. Study of GaN adsorption on the Si surface;Applied Surface Science;2009-10

5. Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates;Journal of the Korean Physical Society;2009-06-15

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