Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN
Author:
Affiliation:
1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
2. Department of Materials Physics and Chemistry, Faculty of Engineering, Kyushu University, Motooka 744, Fukuoka 819-0395, Japan
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00766
Reference52 articles.
1. GaN: from fundamentals to applications
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3. Rectifying Properties of p-GaN Nanowires and an n-Silicon Heterojunction Vertical Diode
4. Emerging gallium nitride based devices
5. Lattice parameters of gallium nitride
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