Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)-Reference-Cited by-同舟云学术

Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Published:2024-03-11 Issue:11 Volume:124 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Tsai Yuhua¹²^ORCID,Kobata Masaaki³^ORCID,Fukuda Tatsuo³^ORCID,Tanida Hajime³^ORCID,Kobayashi Toru³,Yamashita Yoshiyuki¹²^ORCID

Affiliation:

1. National Institute for Materials Science 1 , Tsukuba, Ibaraki 305-0044, Japan

2. Department of Applied Chemistry, Faculty of Engineering, Kyushu University 2 , Motooka 744, Fukuoka 819-0395, Japan

3. Materials Sciences Research Center, Japan Atomic Energy Agency (JAEA) 3 , 1-1-1, Kouto, Sayo, Hyogo 679-5148, Japan

Abstract

We investigated the atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001) using x-ray absorption near the edge structure (XANES) and hard x-ray photoelectron spectroscopy. We found that the Sn dopant had only one chemical state, which was a Sn4+ oxidation state. The bond length around the Sn dopant atom became longer due to the relaxation effect after the Sn dopant insertion. Comparison of the experimental and simulated XANES spectra showed that the octahedral Ga substitutional site in the β-Ga2O3(001) is an active Sn dopant site.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Atomic Energy Agency

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0198160/19750203/112105_1_5.0198160.pdf

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