Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates-Reference-Cited by-同舟云学术

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Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates

Published:2009-06-15 Issue:6 Volume:54 Page:2363-2366
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Yang Min,Ahn Hyung Soo,Tanikawa Tomoyuki,Honda Yoshio,Yamaguchi Masahito,Sawaki Nobuhiko

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow;Crystallography Reports;2021-05

2. Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates;Gallium Nitride Materials and Devices XIII;2018-02-23

3. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017

4. Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2013

5. Non-polar m -plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition;SPIE Proceedings;2010-02-11

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